Position Summary
We are seeking a highly motivated SiC & GaN Technology Reliability Engineer to drive reliability qualification, failure analysis, and robustness assessment of next-generation wide-bandgap power semiconductor technologies including Silicon Carbide (SiC) and Gallium Nitride (GaN) devices.
The engineer will lead reliability methodology development, accelerated stress testing, degradation analysis, and qualification activities for discrete devices, and power modules used in industrial, AI datacenter, renewable energy, and high-voltage power conversion applications.
This role requires deep understanding of wide-bandgap device physics, reliability mechanisms, electrical characterization, and technology qualification under high-voltage, high-temperature, and switching stress conditions.
Key Responsibilities
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Develop and execute reliability qualification strategies for SiC and GaN technologies across wafer, package, and system levels.
- Design and own accelerated stress methodologies for:
- HTRB / HTGB , H3TRB / THB , Temperature cycling, Power cycling
- TDDB, Gate oxide reliability
- Short-circuit ruggedness, Avalanche / UIS robustness
- High-temperature operating life (HTOL) , Switching reliability under dynamic stress
- Develop lifetime acceleration models and reliability projections for mission-profile applications.
- Correlate electrical, thermal, material, and process parameters with device degradation and field reliability.
- Lead root-cause investigations for reliability failures using electrical, physical, and material analysis techniques.
- Work closely with process integration, device design, product engineering, packaging, and quality teams to improve technology robustness.
- Generate qualification reports, reliability summaries, statistical analyses, and executive-level recommendations.
Technical Responsibilities
Electrical Reliability & Characterization
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High-voltage characterization up to kV-class devices
- BVdss and leakage characterization vs. temperature
- Gate stress reliability evaluation
- Dynamic switching reliability characterization
- Double-pulse testing and transient robustness analysis
- Dynamic RDS(on) and trapping analysis
- Thermal impedance and electrothermal correlation
- Support cross-sectional analysis and material investigations with FA labs.
Reliability Modeling
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Develop acceleration models for:
- Electric field stress, Temperature stress, Humidity stress, Switching duty cycle stress
- Predict lifetime under mission-profile operating conditions.
Required Qualifications
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MS/PhD in Electrical Engineering, Physics, Materials Science, Semiconductor Engineering, or related discipline.
- 3+ years (or equivalent) experience in semiconductor reliability, characterization, or power device engineering
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Hands-on experience with semiconductor characterization equipment including:
- Keysight Technologies B1505/B1506 systems, High-voltage SMUs, Curve tracers, Oscilloscopes, Double-pulse test benches, Thermal chambers
- HTRB/HTGB systems
- Experience with statistical and data analysis tools: Python, MATLAB, JMP, Excel
