Position Summary
We are seeking a highly motivated Senior Device Engineer to join our GaN Technology Development team and contribute to the research, design, and development of next-generation advanced GaN-based power devices. In this role, you will help develop innovative device architectures and advance existing technology platforms to enable robust, high-performance GaN devices for power conversion applications.
You will work closely with cross-functional engineering teams and foundry partners, applying semiconductor device physics, TCAD simulation, electrical characterization, and data-driven analysis to help develop scalable, manufacturable GaN technologies.
Key Responsibilities
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Support the design, development, and optimization of enhancement-mode GaN HEMTs for high-power applications.
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Research and evaluate novel device architectures to improve electrical performance, manufacturability, and long-term robustness.
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Assist in planning and executing Design of Experiments (DOE) to evaluate new device structures, layouts, and technology options.
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Perform TCAD simulations to characterize and predict device behavior.
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Support on-wafer electrical characterization to advance technology development.
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Analyze wafer- and package-level electrical data to identify performance limitations and support device optimization.
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Collaborate with foundry partners to evaluate device and process tradeoffs affecting yield, reliability, and manufacturability.
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Document findings, prepare engineering reports, and present results to cross-functional teams.
Required Qualifications
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Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field; or M.S. in one of these fields with 4+ years of relevant industry experience.
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Strong foundation in semiconductor device physics, power devices, and wide-bandgap semiconductor technologies.
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Hands-on experience with TCAD tools (e.g., Synopsys Sentaurus, Silvaco Atlas, or equivalent).
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Experience with electrical characterization and data interpretation for semiconductor devices.
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Programming experience in Python, MATLAB, or similar languages for engineering analysis and automation.
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Strong analytical, problem-solving, and communication skills, both written and verbal.
Preferred Qualifications
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Research experience with high-power GaN devices (academic or industry).
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Working knowledge of semiconductor reliability mechanisms and their influence on device design.
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Exposure to designing or analyzing DOEs for device development.
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Familiarity with semiconductor failure analysis techniques.
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Publications, patents, conference presentations, or other technical contributions from graduate research.
