Navitas Semiconductor is seeking a highly motivated Senior Engineer – SiC Technologist to join the India Center of Excellence and support the development, characterization, qualification, and continuous improvement of GeneSiC™ silicon carbide power semiconductor technologies. This role will contribute to next-generation SiC device platforms, including MOSFETs, diodes, known-good-die, discretes, and power module technologies for high-voltage, high-efficiency applications across AI data centers, energy and grid infrastructure, industrial electrification, renewable energy, EV charging, and high-performance power conversion markets.
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Support SiC technology development activities across device design, process integration, characterization, reliability, and product qualification.
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Develop and execute electrical characterization plans for SiC power devices, including breakdown voltage, leakage, threshold voltage, on-resistance, transfer/output characteristics, capacitance, gate charge, switching losses, avalanche robustness, and short-circuit behavior.
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Analyze wafer-level, package-level, and application-level data to identify performance trends, process sensitivities, yield limiters, and reliability risks.
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Collaborate with global device engineering, process integration, product engineering, packaging, test, reliability, quality, and applications teams to drive technology improvements.
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Support accelerated reliability testing and robustness assessments such as HTRB, HTGB, H3TRB/THB, temperature cycling, power cycling, TDDB, HTOL, dynamic stress testing, avalanche/UIS, and short-circuit ruggedness.
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Perform root-cause analysis for device performance or reliability issues using electrical data, statistical analysis, failure analysis inputs, and process history.
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Contribute to design-of-experiments planning, split-lot analysis, process change evaluation, and technology transfer activities.
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Develop automated data analysis workflows and characterization dashboards using tools such as Python, JMP, Excel, MATLAB, or equivalent platforms.
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Prepare clear technical reports, qualification summaries, review presentations, and engineering recommendations for internal stakeholders.
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Mentor junior engineers and help build SiC technology expertise within the India Center of Excellence.
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Bachelor’s or Master’s degree in Electrical Engineering, Electronics Engineering, Materials Science, Physics, Microelectronics, Semiconductor Technology, or a related discipline.
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4–8 years of relevant experience in semiconductor device engineering, power device characterization, reliability, test, product engineering, process integration, or technology development.
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Strong understanding of SiC power device physics, including MOSFETs, JFETs, Schottky diodes, PiN diodes, gate oxide behavior, body diode behavior, and high-voltage device operation.
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Hands-on experience with semiconductor characterization equipment such as curve tracers, high-voltage SMUs, parametric analyzers, oscilloscopes, double-pulse testers, thermal chambers, probe stations, or reliability stress systems.
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Experience analyzing device performance over voltage, current, temperature, switching, and stress conditions.
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Working knowledge of reliability mechanisms in wide-bandgap power devices, including gate oxide degradation, threshold voltage instability, leakage drift, dynamic RDS(on), bipolar degradation, trapping effects, and package-related thermo-mechanical stress.
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Ability to interpret statistical data, identify trends, communicate technical conclusions, and recommend corrective actions.
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Strong written and verbal communication skills, with the ability to collaborate across global, cross-functional teams.
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Master’s degree or Ph.D. with specialization in power semiconductor devices, SiC technology, semiconductor reliability, or power electronics.
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Experience with 650 V, 750 V, 1200 V, 1700 V, or higher-voltage SiC MOSFET and diode technologies.
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Familiarity with automotive, industrial, or renewable-energy qualification standards and customer requirements.
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Experience with TCAD, SPICE, electrothermal simulation, device modeling, or mission-profile-based reliability assessment.
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Exposure to wafer fabrication, epitaxy, implantation, oxidation, metallization, passivation, wafer thinning, assembly, or power module integration.
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Experience working with external foundries, OSATs, failure analysis labs, universities, or global technology partners.
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Demonstrated ability to publish technical work, file patents, or present in technical reviews, conferences, or customer-facing forums.
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Deep technical curiosity and strong problem-solving discipline.
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Data-driven decision-making with strong statistical and analytical capability.
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Ability to connect device physics, process behavior, package effects, and application-level performance.
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Comfort working in ambiguous technology-development environments with evolving priorities.
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Strong collaboration across time zones with global engineering and business stakeholders.
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Clear communication of complex technical information to engineering, program, quality, and leadership audiences.
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Ownership mindset with the ability to independently drive experiments, analysis, reviews, and closure of technical issues.
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Timely execution of characterization, reliability, and technology-development deliverables.
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High-quality technical analysis that enables clear decisions on device performance, robustness, yield, and qualification readiness.
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Effective collaboration with global teams to resolve technology issues and accelerate project milestones.
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Measurable contribution to SiC technology capability building within the India Center of Excellence.
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Improved efficiency through reusable test methods, analysis templates, dashboards, or documented best practices.
The role will report into the SiC Technology / Device Engineering leadership team and will work closely with global stakeholders in technology development, product engineering, reliability, quality, applications, packaging, test engineering, and manufacturing operations.
