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Staff SiC and GaN Device Characterization Engineer
NAVITAS SEMICONDUCTOR USA, INC. —Pune, Maharashtra
- Doctoral degree
- Master's degree
- Electrical Engineering
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5h
Sr. SiC and GaN Device Characterization Engineer
NAVITAS SEMICONDUCTOR USA, INC. —Pune, Maharashtra
- Doctoral degree
- Master's degree
- Electrical Engineering
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5h
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Mahindra & Mahindra Ltd —Pune, Maharashtra
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- Email
- Hybrid work
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QAD, Inc. —Pune, Maharashtra
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Sr. SiC and GaN Device Characterization Engineer
NAVITAS SEMICONDUCTOR USA, INC. —Pune, Maharashtra
Drive correlation studies between wafer-level, package-level, and system-level electrical performance. The engineer will support technology teams for all new…
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5h

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Staff SiC and GaN Device Characterization Engineer

NAVITAS SEMICONDUCTOR USA, INC.
Pune, Maharashtra

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Job details

5 hours ago

Qualifications

Doctoral degree
Test automation
Master's degree
Electrical Engineering
RDS database
Python

Full job description

Position Summary

We are seeking a highly motivated SiC and GaN Device Characterization Engineer to lead electrical characterization of silicon carbide and gallium nitride power semiconductor devices including MOSFETs, JFETs, and power modules. The engineer will support technology teams for all new technology characterization, robustness measurements, FOM validation and competitor benchmarking through device testing and data analysis.

The ideal candidate will have strong expertise in high-voltage/high-temperature semiconductor characterization, power device physics, and test methods for wide-bandgap devices.

Key Responsibilities

Perform electrical characterization of SiC and GaN power devices across temperature, voltage, and switching conditions.
Develop and execute characterization plans for:
- Static electrical performance (BVdss, leakage, Vth, RDS(on), transfer/output curves)
- Dynamic switching performance (Qg, switching losses, dv/dt, di/dt, short-circuit, avalanche robustness)
Characterize SiC JFET/MOSFETs under DC and switching stress.
Analyze device behavior under gate-drain, drain-source, and transient stress conditions.
Collaborate with process, design, packaging, and reliability teams to optimize device performance and robustness.
Drive correlation studies between wafer-level, package-level, and system-level electrical performance.
Develop automated characterization methodologies using scripting and test automation tools.
Generate technical reports, and engineering recommendations for design reviews and product qualification.

Required Qualifications

MS/PhD (preferred) in Electrical Engineering, Materials Science, Physics, or related discipline
5 years of experience in power semiconductor characterization, reliability or test engineering
Strong understanding of SiC and GaN device physics, MOSFETs, JFET operation
Hands-on experience with semiconductor test instrumentation such as: Keysight Technologies parametric analyzers (e.g., B1505), Curve tracers, High-voltage SMUs, Oscilloscopes, Double-pulse test systems, Thermal chambers and HTRB systems
Experience analyzing large characterization datasets using Python, JMP, Excel
Strong statistical data analysis and problem-solving capability

Preferred Qualifications

Experience with power modules and package interactions.
Experience with defect screening, failure analysis, and reliability acceleration modeling
Experience with DOE, SPC, Weibull analysis, and degradation modeling

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packaging engineer jobs in talawade pune maharashtra

Staff SiC and GaN Device Characterization Engineer

Sr. SiC and GaN Device Characterization Engineer

Manager- CDMM/Vendor Development

Senior Product Manager, Payments Data

Senior Product Manager, AI Platform

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